Product: IC Substrate
Material:
Core: BT resin (Tg≥181℃, CTE 13.5–16.5 ppm/℃); ABF (Tg≥183℃, CTE≤9.7 ppm/℃); Ceramic (AlN: 138–177 W/(m·K), Si₃N₄: ≥790 MPa)
Prepreg: HL832-NX, MCL-E-679 series, thickness 24–39 μm
Quality standard: IPC-4101F, IEC 249-2, AEC-Q200, UL94 V-0
Dielectric constant:
BT resin: 4.05–4.15@1MHz; ABF: 3.47±0.1@1GHz; Si₃N₄: 3.77±0.1@10GHz
Layers: Standard 2–13 layers (WB-BGA/CSP); High-density 6–21 layers (FC-BGA)
Thickness:
Substrate: 0.12–3.1 mm; Build-up dielectric: 24–39 μm
Copper thickness:
Signal layer: 11–34 μm; Core layer: 24 μm (typical); Build-up layer: 17 μm (nominal)
Surface technology:
Primary: ENEPIG (Ni 2.9–4.9 μm / Pd 0.09–0.24 μm / Au 0.04–0.09 μm)
Options: OSP (0.14–0.39 μm), Immersion Tin (1.1–2.4 μm)
Special requirements:
Min line/space: 8/11 μm; Microvia diameter: 58–141 μm
Warpage ≤0.72%; Thermal cycle (-54℃~151℃, 1050 cycles no delamination)
Application:
HPC: CPU/GPU (FC-BGA); Consumer: Mobile AP (CSP); Automotive: ADAS radar; 5G: RF modules
